2N6661, 2N6661-2, 2N6661jantx, 2N6661jantxv www.vishay.com vishay siliconix s11-1542-rev. d, 01-aug-11 1 document number: 70225 this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 www.vishay.com/doc?67884 n-channel 90 v (d-s) mosfet features ? military qualified ? low on-resistence: 3.6 ? ? low threshold: 1.6 v ? low input capacitance: 35 pf ? fast switching speed: 6 ns ? low input and output leakage benefits ? guaranteed reliability ?low offset voltage ? low-voltage operation ? easily driven without buffer ? high-speed circuits ? low error voltage applications ? hi-rel systems ? direct logic-level interface: ttl/cmos ? drivers: relays, solenoid s, lamps, hammers, displays, memories, transistors, etc. ? battery operated systems ?solid-state relays notes a. pulse width limited by maximum junction temperature. b. not required by military spec. product summary v ds (v) 90 r ds(on) ( ? ) at v gs = 10 v 4 configuration single 1 2 3 to-205ad (to-39) top view d g s ordering information part package description/dscc part number vishay ordering part number 2N6661 to-205ad (to-39) commercial 2N6661 commercial, lead (pb)-free 2N6661-e3 2N6661-2 see -2 flow document 2N6661-2 2N6661jantx jantx2N6661 (std au leads) 2N6661jtx02 jantx2N6661 (with solder) 2N6661jtxl02 jantx2N6661p (with pind) 2N6661jtxp02 2N6661jantxv jantxv2N6661 (std au leads) 2N6661jtxv02 jantxv2N6661p (with pind) 2N6661jtvp02 absolute maximum ratings (t a = 25 c, unless otherwise noted) parameter symbol limit unit drain-source voltage v ds 90 v gate-source voltage v gs 20 continuous drain current (t j = 150 c) t c = 25 c i d 0.86 a t c = 100 c 0.54 pulsed drain current a i dm 3 maximum power dissipation t c = 25 c p d 6.25 w t a = 25 c 0.725 thermal resistance, junction-to-ambient b r thja 170 c/w thermal resistance, junction-to-case r thjc 20 operating junction and storage temperature range t j , t stg - 55 to 150 c
2N6661, 2N6661-2, 2N6661jantx, 2N6661jantxv www.vishay.com vishay siliconix s11-1542-rev. d, 01-aug-11 2 document number: 70225 this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 notes a. for design aid only, not subject to production testing. b. pulse test: pw ? 300 s duty cycle ? 2 %. c. switching time is essentially independent of operating temperature. d. this parameter not registered with jedec. stresses beyond those listed under absolute maximum ratings ma y cause permanent damage to th e device. these are stress rating s only, and functional operation of the device at these or any other condit ions beyond those indicated in the operatio nal sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended pe riods may affect device reliability. specifications (t a = 25 c, unless otherwise noted) parameter symbol test conditions limits unit min. typ. b max. static drain-source breakdown voltage v ds v ds = 0 v, i d = 10 a 90 125 - v gate-source threshold voltage v gs(th) v ds = v gs , i d = 1 ma 0.8 1.6 2 t a = - 55 c -1.82.5 t a = 125 c 0.3 1.3 - gate-body leakage i gss v gs = 20 v v ds = 0 v - - 100 na t a = 125 c - - 500 zero gate voltage drain current i dss v gs = 0 v v ds = 72 v --1 a t a = 125 c - - 100 on-state drain current b i d(on) v gs = 10 v v ds = 10 v -1.8-ma drain-source on-state resistance b r ds(on) v gs = 5 v i d = 0.3 a -3.85.3 ? v gs = 10 v i d = 1 a -3.64 t a = 125 c d -6.77.5 forward transconductance b g fs v ds = 7.5 v, i d = 0.475 a 170 340 - ms diode forward voltage v sd v gs = 0 v i s = 0.86 a 0.7 0.9 1.4 v dynamic input capacitance c iss v gs = 0 v v ds = 25 v, f = 1 mhz -3550 pf output capacitance c oss -1540 reverse transfer capacitance c rss -210 drain-source capacitance c ds -30- switching c turn-on time t on v dd = 25 v, r l = 23 ? i d ? 1 a, v gen = 10 v, r g = 23 ? -610 ns turn-off time t off -810
2N6661, 2N6661-2, 2N6661jantx, 2N6661jantxv www.vishay.com vishay siliconix s11-1542-rev. d, 01-aug-11 3 document number: 70225 this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 typical characteristics (25 c, unless ot herwise noted) ohmic region characteristics transfer characteristics on-resistance vs. drain current output characteristics for low gate drive on-resistance vs. gate-to-source voltage normalized on-resistance vs. junction temperature v ds -) v ( e g a t l o v e c r u o s - o t - n i a r d 1.0 0 1.0 2.0 3.0 4.0 5.0 0.8 0.6 0.4 0.2 0 6 v 5 v 4 v 3 v 2 v v gs = 10 v i d - drain current (a) v gs -) v ( e g a t l o v e c r u o s - e t a g 0.5 0.4 0.3 0 0 1 2 0 0.2 0.1 468 125 c v ds = 15 v 25 c i d - drain current (a) t j = - 55 c i d - drain current (a) 10 8 6 0 5 . 2 5 . 0 0 4 2 1.0 1.5 2.0 v gs = 10 v r ds(on) - drain-source on-resistance ( ) v ds - drain-to-source voltage (v) 100 0 0.4 0.8 1.2 1.6 2.0 80 60 40 20 0 2.8 v 2.6 v 2.4 v 2.2 v 2.0 v 1.8 v v gs = 3 v i d - drain current (ma) v gs - gate-source voltage (v) 7 048121620 6 5 4 0 3 2 1 i d = 0.1 a 0.5 a 1.0 a r ds(on) - on-resistance ( ) t j - junction temperature (c) 2.25 2.00 1.75 0.50 -50 - 0 5 1 0 1 1.50 1.25 30 70 110 1.00 0.75 v gs = 10 v r ds(on) - drain-source on-resistance (normalized)
2N6661, 2N6661-2, 2N6661jantx, 2N6661jantxv www.vishay.com vishay siliconix s11-1542-rev. d, 01-aug-11 4 document number: 70225 this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 typical characteristics (25 c, unless ot herwise noted) threshold region gate charge capacitance load condition effects on switching normalized thermal transient impedance, junction-to-ambient vishay siliconix maintains worldwide manufactu ring capability. products may be manufact ured at one of seve ral qualified locatio ns. reliability data for silicon technology and package reliability represent a composite of all qualified locations. for related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?70225 . v gs - gate-to-source voltage (v) 10 1 0.01 0.5 0.1 1.0 1.5 2.0 25 c - 55 c 125 c v gs = 5 v t j = 150 c i d - drain current (ma) q g - total gate charge (pc) 15.0 12.5 10.0 0 0 0 5 0 0 1 0 7.5 5.0 200 300 400 2.5 i d = 1.0 a v ds = 45 v 72 v v gs - gate-to-source voltage (v) v ds - drain-to-source voltage (v) 125 100 75 0 0 5 0 1 0 50 25 20 30 40 c oss c iss c rss v gs = 0 v f = 1 mhz c - capacitance (pf) i d - drain current (a) 2 1 1 . 0 100 10 1 v dd = 25 v r l = 23 v gs = 0 v to 10 v i d = 1.0 a t d(on) t d(off) t r t f t - switching time (ns) 0.1 10 k 1.0 0.01 0.1 0 0 1 0 . 1 k 1 0 1 duty cycle = 0.5 0.2 0.1 single pulse normalized effective transient thermal impedance t 1 - square wave pulse duration (s) 1. duty cycle, d = 2. per unit base = r thjc = 20 c/w 3. t jm - t c = p dm z thjc (t) t 1 t 2 t 1 notes: p dm t 2 0.05 0.02 0.01
cd p ch q l1 l2 ld ll seating plane lu hd c l tw r tl lc 12 3 notes: 1. dimensions are in inches. metric equivalents are given for general information only. 2. beyond radius (r) maximum, tw shall be held for a minimum length of 0.011 (0.028 mm). 3. dimension tl measured from maximum hd. 4. outline in this zone is not controlled. 5. dimension cd shall not vary more than 0.010 (0.25 mm) in zone p. this zone is controlled for automatic handling. 6. leads at guage plane 0.054+0.001, ? 0.000 (1.37+0.03, ? 0.00 mm) below seating plane shall be within 0.007 (0.18 mm) radius of true position (tp) at maximum material condition (mmc) relative to tab at mmc. 7. lu applies between l1 and l2, ld applies between l2 and l maximum. diameter is uncontrolled in l1 and beyond ll minimum. 8. all three leads. 9. radius (r) applies to both inside corners of tab. 10. drain is electrically connected to the case. package information vishay siliconix document number: 71367 09-mar-04 www.vishay.com 1 to-205ad (to-39 tall lid) inches millimeters dim min max min max notes cd 0.305 0.335 7.75 8.51 ch 0.240 0.260 6.10 6.60 hd 0.335 0.370 8.51 9.40 lc 0.200 tp 5.08 tp 6 ld 0.016 0.021 0.41 0.53 7, 8 ll 0.500 0.750 12.70 19.05 7, 8 lu 0.016 0.019 0.41 0.48 7, 8 l1 ? 0.050 ? 1.27 7, 8 l2 0.250 ? 6.35 ? 7, 8 p 0.100 ? 2.54 ? 5 q ? 0.050 ? 1.27 4 r ? 0.010 ? 0.25 9 tl 0.029 0.045 0.74 1.14 3 tw 0.028 0.034 0.71 0.86 2 45 tp 45 tp 6 dimensions (see notes 1, 2, 9, 11, 12) ecn: s-40373?rev. c, 15-mar-04 dwg: 5511
document number: 91 000 www.vishay.com revision: 11-mar-11 1 disclaimer legal disclaimer notice vishay all product, product specifications and data ar e subject to change without notice to improve reliability, function or design or otherwise. vishay intertechnology, inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectivel y, vishay), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained in any datasheet or in any o ther disclosure relating to any product. vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. to the maximum extent permitted by applicab le law, vishay disc laims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, incl uding without limitation specia l, consequential or incidental dama ges, and (iii) any and all impl ied warranties, including warran ties of fitness for particular purpose, non-infringement and merchantability. statements regarding the suitability of pro ducts for certain types of applications are based on vishays knowledge of typical requirements that are often placed on vishay products in gene ric applications. such statements are not binding statements about the suitability of products for a partic ular application. it is the customers responsibility to validate that a particu lar product with the properties described in th e product specification is su itable for use in a particul ar application. parameters provided in datasheets an d/or specifications may vary in different applications and perfo rmance may vary over time. all operating parameters, including typical pa rameters, must be validated for each customer application by the customers technical experts. product specifications do not expand or otherwise modify vishays term s and conditions of purchase, including but not limited to the warranty expressed therein. except as expressly indicated in writing, vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the vishay product co uld result in person al injury or death. customers using or selling vishay products not expressly indicated for use in such applications do so at their own risk and agr ee to fully indemnify and hold vishay and it s distributors harmless from and against an y and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that vis hay or its distributor was negligent regarding the design or manufact ure of the part. please contact authorized vishay personnel t o obtain written terms and conditions regarding products designed fo r such applications. no license, express or implied, by estoppel or otherwise, to any intelle ctual property rights is gran ted by this document or by any conduct of vishay. product names and markings noted herein may be trademarks of their respective owners.
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